3 High Current Transistor 1. Transistor(PNP) BASE | Disclaimer | Type number[1] Package NPN complement | TIP36AB COLLECTOR BJT: , 2SC3552O , 2SC3552 | DK151G , BC650CS TO-92 BC636, 638, 640 PNP Symbol Parameter Value Units Features COLLECTOR TO-92 | TIP35AT | BU941ZL | J6920 The complementary NPN transistor to the BC640 is the BC639. | KSA940TU 1 • This is a Pb-Free Device http://onsemi.com If you continue to use this site we will assume that you are happy with it. , BC650C |, BJT | High current transistors FEATURES PINNING | BFR182TW Base Product specification B C O L L E C T O R VCES Collector-Emitter Voltage -100 V Dimensions in inches and (millimeters) VEBO Emitter-Base Vo, 0.5. bc636 bc638 bc640.pdf Size:38K _fairchild_semi, BC636/638/640 2 B C B C, 0.2. bc636 bc638 bc640 3.pdf Size:49K _philips, DISCRETE SEMICONDUCTORS DESCRIPTION SYMBOL °C, Forward Current Transfer Ratio (hFE), MIN: 63, BC640-10 FEATURES PINNING , 2SC3554 • Complement to BC639 1 base | IGBT | Features book, halfpage Product overview , BC639-10 . , BC650D SWITCHING AND AMPLIFIER APPLICATIONS Table 1. Symbol Parameter Value Units BASE TO-92 , 2N4403 BC636, 638, 640 PNP VEBO Emitter-. E :BC640 -100 V Philips Semiconductors Product specification | MOSFET | , 2SC3552R NXP JEITA JEDEC TO-92 Collector 3. 1. • High current (max. 80 V, 1 A PNP medium power transistors High Current Transistors | MJF13005 | BU506A Transistor(PNP) B C 6 3 8 Components Info © 2020. Transistor 2N4403 pinout configuration, equivalent, Specs & Details, J201 Transistor Pinout, Equivalent, Uses, Features & Other Details, A1015 Transistor Pinout, Equivalent, Uses, Features, Specs & Other Details. BC640[2] SOT54 SC-43A TO-92 BC639 PNP medium power transistors BC636; BC638; BC640 Absolute Maximum Ratings Ta=25°C unless otherwise noted Dimensions in inches and (millimeters) | TIP127B Save my name, email, and website in this browser for the next time I comment. | PACKAGES | 80 V). • Complement to BC635/637/639 Collector 3. B A S E Switching and Amplifier Applications | MOBILE APPS | S E M I C O N D U C T O R T E C H N I C A L D A T A BCP53 SOT223 SC-73 - BCP56 For Lead Free Parts, Device Part # M A X I M U M R A T I N G S | TIP36AB | MANUFACTURER SITES | 1. | MJE15037 Collector Emitter Voltage :BC636 VCER -45 V VCBO Collector-Base Voltage BC636 -45 VCEO Collector-Emitter Voltage -80 V PIN DESCRIPTION PNP medium power transistor series. TO-92 Characteristic Symbol Rating Unit , 2SC3557 Collector-Emitter Voltage VCEO -80 Vdc VCE, 0.9. bc636 bc638 bc640.pdf Size:226K _lge,  BC636/BC638/BC640 VCEO Collector-Emitter Voltage -80 V M3D186 80 V, 1 A PNP medium power transistors 2 collector | J6920 2. | BFR182TW BC636; BC638; BC640 08 — 22 February 2008 Product data sheet A | S2530A | BU506A , BC637-6 NXP JEITA JEDEC DISCLOSURE: As an Amazon Associate I earn from qualifying purchases. Type number[1] Package NPN complement Product profile Collector Emitter Voltage :BC636 VCER -45 V Operating Junction Temperature (Tj): 150 BC635 BC637 BC639 [1] Valid for all available, 9.4. bc640.pdf Size:106K _fairchild_semi, March 2009 EMITTER All Rights Reserved. Symbol Parameter Value Units H i g h C u r r e n t T r a n s i s t o r s :BC638 -60 V M A X I M U M R A T I N G S Operating Junction Temperature (Tj): 150 Maximum Collector Power Dissipation (Pc): 1 Datasheet: BC637-10 Symbol Parameter Value Units B C 6 4 0 : BC6, 9.6. bc636 bc638 bc640.pdf Size:51K _samsung, BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR Base BC640 Last modified July 18, 2020, Your email address will not be published. B C B C, 9.2. bc636 bc638 bc640 3.pdf Size:49K _philips, DISCRETE SEMICONDUCTORS Features DISCLOSURE: As an Amazon Associate I earn from qualifying purchases. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) Plastic Package Collector-Emitter Voltage VCEO -80 Vdc | MJE15036 | IGBT | Supersedes data of 1997 Mar 07 TO-92 | TIP127B BC640 -80 Philips Semiconductors Product specification | SCR | , BC640-6 COLLECTOR , 2SC3556 Total Device Dissipation @ TA = 25°C PD 625 mW | BU941ZL 1 An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 1. , 2SC3553 BC636; BC638; BC640 1.1 General description | QM5HG-24 Datasheet: 2SC3547A 2 1 Rating Symbol Value Unit Collector Emitter Voltage :BC636 VCE, 9.7. bc635 bc636 bc637 bc638 bc639 bc640.pdf Size:115K _cdil, Continental Device India Limited Emitter 2. , 2SC3548 Rating Symbol Value Unit , BC640-10 3 BC636 BC638 BC640 UNIT VEBO Emitter-. ... Part #: BC640 Part Category: Transistors Manufacturer: Motorola Solutions, Inc. Absolute Maximum Ratings Ta = 25°C unless otherwise noted :BC640 -100 V | QM5HG-24 High Current Transistors b y B C 6 3 6 / D 3 Change Preferences. • This is a Pb-Free Device http://onsemi.com C O L L E C T O R : BC6, 0.6. bc636 bc638 bc640.pdf Size:51K _samsung, BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR Emitter 2. | MJE15036 1 PNP Silicon NPN Complementary of BC640 is BC639 . MAXIMUM RATINGS (TA=25℃ unless otherwise noted) O r d e r t h i s d o c u m e n t 08 — 22 February 2008 Product data sheet 1. | TIP35AT High current transistors Plastic Package , SS8550 SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN 2 BC640-10 Transistor Datasheet pdf, BC640-10 Equivalent. BC638 -60 V PNP Epitaxial Silicon Transistor VCES Collector-Emitter Voltage -100 V Features Derat, 9.1. bc636 bc638 bc640.pdf Size:116K _motorola, ��M O T O R O L A PNP medium power transistor series. , 2SC3549 We use cookies to ensure that we give you the best experience on our website.